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Digital Transistor CBI DTC143ZE NPN Silicon Epitaxial Planar Featuring Integrated Bias Resistors for Circuit Design

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Digital Transistor CBI DTC143ZE NPN Silicon Epitaxial Planar Featuring Integrated Bias Resistors for Circuit Design

Output Voltage(VO(on)) : -

Input Resistor : 4.7kΩ

Resistor Ratio : 10

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-523

Mfr. Part # : DTC143ZE

Model Number : DTC143ZE

Package : SOT-523

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Product Overview

The MMDTC143ZE is an NPN Silicon Epitaxial Planar Digital Transistor designed to simplify circuit design and reduce part count and manufacturing processes through its built-in bias resistors. It features integrated resistors for input (R2) and collector (R1), with the emitter being common. This configuration is ideal for applications requiring simplified digital transistor circuitry.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Silicon Epitaxial Planar
Type: Digital Transistor
Configuration: NPN
Built-in Components: Bias resistors (R1, R2)
Marking: E23

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Emitter Voltage	VCEO	-	-	50	V
Input Voltage	VI	-	-5 to +30	-	V
Collector Current	IC	-	-	100	mA
Power Dissipation	Ptot	-	-	150	mW
Junction Temperature	Tj	-	-	150	C
Storage Temperature Range	Tstg	-55	-	+150	C
Characteristics at Ta = 25 C
DC Current Gain	hFE	80	-	-	-
Collector Base Cutoff Current	ICBO	-	-	0.5	A
Emitter Base Cutoff Current	IEBO	-	-	1.8	mA
Collector Emitter Saturation Voltage	VCE(sat)	-	-	0.3	V
Input on Voltage	VI(on)	-	-	1.3	V
Input off Voltage	VI(off)	0.5	-	-	V
Transition Frequency	fT	-	250	-	MHz
Input Resistance (R1)	R1	3.29	4.7	6.11	K
Resistance Ratio (R2 / R1)	-	8	10	12	-

2410121547_CBI-DTC143ZE_C2828442.pdf

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