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Compact SOT363 package Nexperia NHUMD2X transistor with 80 volt collector emitter voltage and 100 milliamp output current

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Compact SOT363 package Nexperia NHUMD2X transistor with 80 volt collector emitter voltage and 100 milliamp output current

Input Resistor : 22kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 80V

Description : 80V TSSOP-6 Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : NHUMD2X

Model Number : NHUMD2X

Package : TSSOP-6

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Product Overview

The NHUMD3/2/12 series comprises NPN/PNP resistor-equipped double transistors (RET) in a compact SOT363 (SC-88) SMD plastic package. These devices offer an 80 V breakdown voltage and 100 mA output current capability, featuring built-in resistors that simplify circuit design, reduce component count, and lower pick-and-place costs. They are AEC-Q101 qualified and suitable for various digital applications, serving as a cost-effective alternative to BC846/BC856 series in digital circuits, for controlling IC inputs, and switching loads.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT363 (SC-88)
  • Qualification: AEC-Q101

Technical Specifications

Model R1 (k) R2 (k) NPN/NPN Complement PNP/PNP Complement Collector-Emitter Voltage (VCEO) Output Current (IO)
NHUMD3 10 10 NHUMH11 NHUMB11 80 V 100 mA
NHUMD2 22 22 NHUMH1 NHUMB1 80 V 100 mA
NHUMD12 47 47 NHUMH2 NHUMB2 80 V 100 mA

Key Characteristics (Per Transistor, PNP with negative polarity)

Parameter Conditions Min Typ Max Unit
Collector-Emitter Voltage (VCEO) Open base - - 80 V
Output Current (IO) - - - 100 mA
Collector-Base Breakdown Voltage (V(BR)CBO) IC = 100 A; IE = 0 A 80 - - V
Collector-Emitter Breakdown Voltage (V(BR)CEO) IC = 2 mA; IB = 0 A 80 - - V

Resistor Values (Bias Resistor 1 - R1)

Type Number Min Typ Max Unit
NHUMD3 7 10 13 k
NHUMD2 15.4 22 28.6 k
NHUMD12 33 47 61 k

2411272001_Nexperia-NHUMD2X_C3588775.pdf


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