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FUXINSEMI BT138D-800E TRIAC 12A 800V High Shock Load Device for Industrial Inductive Load Applications

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FUXINSEMI BT138D-800E TRIAC 12A 800V High Shock Load Device for Industrial Inductive Load Applications

Holding Current (Ih) : 30mA

Current - Gate Trigger(Igt) : 10mA

Voltage - On State(Vtm) : 1.55V

Average Gate Power Dissipation (PG(AV)) : 500mW

Current - On State(It(RMS)) : 12A

Peak off - state voltage(Vdrm) : 800V

Current - Surge(Itsm@f) : 95A@50Hz

SCR Type : -

Operating Temperature : -40℃~+125℃

Gate Trigger Voltage (Vgt) : 1.3V

Description : TRIAC 800V 12A Surface Mount TO-252

Mfr. Part # : BT138D-800E

Model Number : BT138D-800E

Package : TO-252

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Product Overview

The BT138D Series TRIACs are 12A, 4-quadrant devices designed for high shock loading and excellent commutation performance, making them ideal for inductive loads. Applications include washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

  • Brand: FS
  • Origin: www.fuxinsemi.com
  • Package: TO-252AB

Technical Specifications

SymbolParameterValueUnitTest Condition
IT(RMS)RMS on-state current12A
VDRM / VRRMRepetitive peak off-state voltage / Repetitive peak reverse voltage600 / 800V
VTMForward "on" voltage1.55VITM = 15A, tp=380s
ITSMNon repetitive surge peak on-state current (full cycle, F=50Hz)95A
I2tI2t value for fusing (tp=10ms)45A2s
dIT/dtCritical rate of rise of on-state current (IG =2IGT)50 (--) / 4 ()A/s
IGMPeak gate current2A
PG(AV)Average gate power dissipation0.5W
TJJunction Temperature-40 ~ +125
TSTGStorage Temperature-40 ~ +150
IGTGate trigger currentMAX. 10 (--) / 25 ()mAVD =12V, IT = 0.1A, Tj =25
VGTGate trigger voltageMAX. 1.3V
VGDGate non-trigger voltageMIN. 0.2VVD =VDRM, Tj =125
ILlatching currentMAX. 30 (--) / 40 ()mAVD =12V, IGT = 0.1A, Tj =25
IHHolding currentMAX. 30mA
dVD/dtCritical-rate of rise of commutation voltageMIN. 20V/sVD=2/3VDRM, Gate Open, Tj =125
IDRMRepetitive Peak Off-State CurrentMAX. 10AVD =VDRM, Tj=25
IRRMRepetitive Peak Reverse CurrentMAX. 1mAVR =VRRM, Tj=125
Rth(j-c)Junction to case (AC)TYP. 1.4/W
Rth(j-a)Junction to ambientTYP. 70/W

2210311230_FUXINSEMI-BT138D-800E_C2934842.pdf


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