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Built in bias resistor PNP digital transistor ROHM DTA123EMT2L designed for inverter circuits and driver interface

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Built in bias resistor PNP digital transistor ROHM DTA123EMT2L designed for inverter circuits and driver interface

Output Voltage(VO(on)) : 300mV@10mA,0.5mA

Input Resistor : 2.2kΩ

Resistor Ratio : 1

Number : -

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-723

Mfr. Part # : DTA123EMT2L

Model Number : DTA123EMT2L

Package : SOT-723

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Product Overview

The DTA123E series is a PNP digital transistor featuring built-in biasing resistors (R1 = R2 = 2.2k). This integrated design simplifies circuit construction, particularly for inverter circuits, by eliminating the need for external input resistors. Designed for ease of use, only on/off conditions need to be set for operation, streamlining circuit design. These transistors are suitable for applications such as inverters, interfaces, and drivers. Complementary NPN types are available in the DTC123E series.

Product Attributes

Brand: ROHM
Type: PNP Digital Transistor (Bias Resistor Built-in Transistor)

Technical Specifications

Model	Package	Package Size	Taping Code	Reel Size (mm)	Tape Width (mm)	Basic Ordering Unit (pcs)	Marking
DTA123EM	SOT-723 (VMT3)	1212	T2L	180	8	8000	12
DTA123EE	SOT-416 (EMT3)	1616	TL	180	8	3000	12
DTA123EUA	SOT-323 (UMT3)	2021	T106	180	8	3000	12
DTA123EKA	SOT-346 (SMT3)	2928	T146	180	8	3000	12

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings	VCC	(Ta = 25C)	-50				V
	VIN	(Ta = 25C)	-12 to 10				V
	IO	(Ta = 25C)	-100				mA
	IC(MAX)*1	(Ta = 25C)	-100				mA
	PD (DTA123EM)	*2	150				mW
	PD (DTA123EE)	*2	150				mW
	PD (DTA123EUA)	*2	200				mW
	PD (DTA123EKA)	*2	200				mW
	Tj		150
	Tstg		-55 to +150
Electrical Characteristics	VI(off)	VCC = -5V, IO = -100A	-	-	-0.5	V
	VI(on)	VO = -0.3V, IO = -20mA	-3.0	-	-	V
	VO(on)	IO = -10mA, II = -0.5mA	-	-100	-300	mV
	II	VI = -5V	-	-	-3.8	mA
	IO(off)	VCC = -50V, VI = 0V	-	-	-500	nA
	GI	VO = -5V, IO = -20mA	20	-	-	-
	R1		-	1.54	2.2	2.86	k
	R2/R1		-	0.8	1.0	1.2	-
	fT*1	VCE = -10V, IE = 5mA, f = 100MHz	-	250	-	MHz

2304140030_ROHM-DTA123EMT2L_C79955.pdf

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